View STGD7NC60HT4_5534089.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

1/12 september 2004 stgp7nc60h - stgd7nc60h n-channel 7a - 600v to-220/dpak very fast powermesh? igbt table 1: general features lower on-voltage drop (v cesat ) off losses include tail current lower c res /c ies ratio high frequency operation up to 70 khz new generation products with tighter parameter distribution description using the latest high voltage technology based on a patented strip layout, stmicroelectronics has designed an advanced family of igbts, the pow- ermesh ? igbts, with outstanding performances. the suffix "h" identifies a family optimized for high frequency applications in order to achieve very high switching performances (reduced tfall) man- taining a low voltage drop. applications high frequency inverters smps and pfc in both hard switch and resonant topologies motor drivers table 2: order code figure 1: package figure 2: internal schematic diagram type v ces v ce(sat) (max) @25c i c @100c stgp7nc60h STGD7NC60HT4 600 v 600 v < 2.5 v < 2.5 v 14 a 14 a to-220 1 2 3 1 3 dpak weight for d 2 pak: 1.40gr 0.01 weight for to-220: 1.92gr 0.01 part number marking package packaging stgp7nc60h gp7nc60h to-220 tube STGD7NC60HT4 d7nc60h dpak tape & reel rev. 1
stgp7nc60h - stgd7nc60h 2/12 table 3: absolute maximum ratings ( ) pulse width limited by max. junction temperature. table 4: thermal data electrical characteristics (t case =25 c unless otherwise specified) table 5: main parameters (#) calculated according to the iterative formula: symbol parameter value unit to-220 dpak v ces collector-emitter voltage (v gs = 0) 600 v v ecr emitter-collector voltage 20 v v ge gate-emitter voltage 20 v i c collector current (continuous) at t c = 25 c (#) 25 a i c collector current (continuous) at t c = 100 c (#) 14 a i cm ( ) collector current (pulsed) 50 a p tot total dissipation at t c = 25 c 80 70 w derating factor 0.64 0.56 w/ c t stg storage temperature ? 55 to 150 c t j operating junction temperature min. typ. max. rthj-case thermal resistance junction-case to-220 1.56 c/w dpak 1.78 rthj-amb thermal resistance junction-ambient to-220 62.5 c/w dpak 100 t l maximum lead temperature for soldering purpose (1.6 mm from case, for 10 sec.) to-220 300 c dpak 275 symbol parameter test conditions min. typ. max. unit v br(ces) collector-emitter breakdown voltage i c = 1 ma, v ge = 0 600 v i ces collector cut-off current (v ge = 0) v ce = max rating, t c = 25 c v ce = max rating, t c = 125 c 10 1 a ma i ges gate-emitter leakage current (v ce = 0) v ge = 20v , v ce = 0 100 na v ge(th) gate threshold voltage v ce = v ge , i c = 250 a 3.75 5.75 v v ce(sat) collector-emitter saturation voltage v ge = 15v, i c = 7 a v ge = 15v, i c = 7 a, tc= 125 c 1.85 1.7 2.5 v v i c t c () t jmax t c ? r thj c ? v cesat max () t c i c , () -------------------------------------------------------------------------------------------------- =
3/12 stgp7nc60h - stgd7nc60h electrical characteristics (continued) table 6: dynamic (1) pulsed: pulse duration= 300 s, duty cycle 1.5% table 7: switching on table 8: switching off table 9: switching energy 2) eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. if the igbt is offered in a package with a co-pack diode, the co-pack diode is used as external diode. igbts & diode are at the same temperature (25 c and 125 c) (3)turn-off losses include also the tail of the collector current. symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ce = 15 v , i c = 7 a 4.30 s c ies input capacitance v ce = 25 v, f= 1 mhz, v ge = 0 720 pf c oes output capacitance 81 pf c res reverse transfer capacitance 17 pf q g q ge q gc total gate charge gate-emitter charge gate-collector charge v ce = 390 v, i c = 7 a, v ge = 15 v (see figure 21) 35 7 16 48 nc nc nc i cl turn-off soa minimum current v clamp = 480 v , tj = 150 c r g = 10 ?, v ge = 15 v 50 a symbol parameter test conditions min. typ. max. unit t d(on) t r (di/dt) on turn-on delay time current rise time turn-on current slope v cc = 390 v, i c = 7 a r g =10 ? , v ge = 15v, tj= 25 c (see figure 18) 18.5 8.5 1060 ns ns a/s t d(on) t r (di/dt) on turn-on delay time current rise time turn-on current slope v cc = 390 v, i c = 7 a r g =10 ? , v ge = 15v, tj= 125 c (see figure 19) 18.5 7 1000 ns ns a/s symbol parameter test conditions min. typ. max. unit t r (v off ) off voltage rise time v cc = 390 v, i c = 7 a, r g = 10 ? , v ge = 15 v t j = 25 c (see figure 19) 27 ns t d ( off ) turn-off delay time 72 ns t f current fall time 60 ns t r (v off ) off voltage rise time v cc = 390 v, i c = 7 a, r g = 10 ? , v ge = 15 v tj = 125 c (see figure 19) 56 ns t d ( off ) turn-off delay time 116 ns t f current fall time 105 ns symbol parameter test conditions min. typ. max unit eon (2) e off (3) e ts turn-on switching losses turn-off switching loss total switching loss v cc = 390 v, i c = 7 a r g = 10 ? , v ge = 15v, tj= 25 c (see figure 19) 95 115 210 125 150 275 j j j eon (2) e off (3) e ts turn-on switching losses turn-off switching loss total switching loss v cc = 390 v, i c = 7 a r g = 10 ? , v ge = 15v, tj= 125 c (see figure 19) 140 215 355 j j j
stgp7nc60h - stgd7nc60h 4/12 figure 3: output characteristics figure 4: transconductance figure 5: collector-emitter on voltage vs col- lector current figure 6: transfer characteristics figure 7: collector-emitter on voltage vs tem- perature figure 8: normalized gate threshold vs tem- perature
5/12 stgp7nc60h - stgd7nc60h figure 9: normalized breakdown voltage vs temperature figure 10: capacitance variations figure 11: total switching losses vs gate re- sistance figure 12: gate charge vs gate-emitter volt- age figure 13: total switching losses vs temper- ature figure 14: total switching losses vs collector current
stgp7nc60h - stgd7nc60h 6/12 figure 15: thermal impedance for to-220 figure 16: thermal impedance for dpak figure 17: turn-off soa figure 18: ic vs frequency for a fast igbt suitable for high frequency appli- cations, the typical collector current vs. maximum operating frequency curve is reported. that fre- quency is defined as follows: f max = (p d - p c ) / (e on + e off ) 1) the maximum power dissipation is limited by maximum junction to case thermal resistance: p d = ? t / r thj-c considering ? t = t j - t c = 125 c- 75 c = 50 c 2) the conduction losses are: p c = i c * v ce(sat) * with 50% of duty cycle, v cesat typical value @125 c. 3) power dissipation during on & off commuta- tions is due to the switching frequency: p sw = (e on + e off ) * freq. 4) typical values @ 125 c for switching losses are used (test conditions: v ce = 390v, v ge = 15v, r g = 3.3 ohm). furthermore, diode recovery en- ergy is included in the e on (see note 2), while the tail of the collector current is included in the e off measurements (see note 3).
7/12 stgp7nc60h - stgd7nc60h figure 19: test circuit for inductive load switching figure 20: switching waveforms figure 21: gate charge test circuit
stgp7nc60h - stgd7nc60h 8/12 dim. mm. inch min. typ max. min. typ. max. a 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 d 15.25 15.75 0.60 0.620 e 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 f 1.23 1.32 0.048 0.052 h1 6.20 6.60 0.244 0.256 j1 2.40 2.72 0.094 0.107 l 13 14 0.511 0.551 l1 3.50 3.93 0.137 0.154 l20 16.40 0.645 l30 28.90 1.137 ? p 3.75 3.85 0.147 0.151 q 2.65 2.95 0.104 0.116 to-220 mechanical data
9/12 stgp7nc60h - stgd7nc60h dim. mm inch min. typ. max. min. typ. max. a 2.20 2.40 0.087 0.094 a1 0.90 1.10 0.035 0.043 a2 0.03 0.23 0.001 0.009 b 0.64 0.90 0.025 0.035 b2 5.20 5.40 0.204 0.213 c 0.45 0.60 0.018 0.024 c2 0.48 0.60 0.019 0.024 d 6.00 6.20 0.236 0.244 e 6.40 6.60 0.252 0.260 g 4.40 4.60 0.173 0.181 h 9.35 10.10 0.368 0.398 l2 0.8 0.031 l4 0.60 1.00 0.024 0.039 v2 0 o 8 o 0 o 0 o p032p_b to-252 (dpak) mechanical data
stgp7nc60h - stgd7nc60h 10/12 tape and reel shipment (suffix ?t4?)* tube shipment (no suffix)* dpak footprint * on sales type dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0.795 g 16.4 18.4 0.645 0.724 n 50 1.968 t 22.4 0.881 base qty bulk qty 2500 2500 reel mechanical data dim. mm inch min. max. min. max. a0 6.8 7 0.267 0.275 b0 10.4 10.6 0.409 0.417 b1 12.1 0.476 d 1.5 1.6 0.059 0.063 d1 1.5 0.059 e 1.65 1.85 0.065 0.073 f 7.4 7.6 0.291 0.299 k0 2.55 2.75 0.100 0.108 p0 3.9 4.1 0.153 0.161 p1 7.9 8.1 0.311 0.319 p2 1.9 2.1 0.075 0.082 r 40 1.574 w 15.7 16.3 0.618 0.641 tape mechanical data all dimensions are in millimeters all dimensions are in millimeters
11/12 stgp7nc60h - stgd7nc60h table 10: revision history date revision description of changes 20-aug-2004 1 new datasheet
stgp7nc60h - stgd7nc60h 12/12 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is a registered trademark of stmicroelectronics all other names are the property of their respective owners ? 2004 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america

▲Up To Search▲

Price & Availability of STGD7NC60HT4

	To Download STGD7NC60HT4 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .